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The resistivity change due to electron spin resonance (ESR) absorption isinvestigated in a high-mobility two-dimensional electron system formed in aSi/SiGe heterostructure. Results for a specific Landau level configurationdemonstrate that the primary cause of the ESR signal is a reduction of the spinpolarization, not the effect of electron heating. The longitudinal spinrelaxation time T_1 is obtained to be of the order of 1 ms in an in-planemagnetic field of 3.55 T. The suppression of the effect of the Rashba fieldsdue to high-frequency spin precession explains the very long T_1.Comment: to be published in Phys. Rev. Let

Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well