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Metal-semiconductor contacts play a key role in electronics. Here we showthat for quasi-one dimensional (Q1D) structures such as nanotubes andnanowires, side contact with the metal only leads to weak band realignment, incontrast with bulk metal-semiconductor contacts. Schottky barriers are muchreduced compared with the bulk limit, and should facilitate the formation ofgood contacts. However, the conventional strategy of heavily doping thesemiconductor to obtain Ohmic contacts breaks down as the nanowire diameter isreduced. The issue of Fermi level pinning is also discussed, and it isdemonstrated that the unique density of states of Q1D structures makes themless sensitive to this effect. Our results agree with recent experimental work,and should apply to a broad range of Q1D materials.Comment: Physical Review Letters 97, 026804 (2006

Size-Dependent Effects on Electrical Contacts to Nanotubes and Nanowires