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We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias. We find that the spin torque per unit current exerted on the freelayer decreases by less than 10% over a bias range where the TMR decreases byover 40%. We examine the implications of this result for various spin-polarizedtunneling models and find that it is consistent with magnetic-state-dependenteffective tunnel decay lengths.Comment: 4 pages, 3 figure

Spin Torque, Tunnel-Current Spin Polarization, and Magnetoresistance in MgO Magnetic Tunnel Junctions