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We report an investigation on the properties of 0.33 ML of Sn on Ge(111) attemperatures down to 5 K. Low-energy electron diffraction and scanningtunneling microscopy show that the (3x3) phase formed at 200 K, reverts to anew (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristicof the (3x3) phase is lost across the phase transition. Angle-resolvedphotoemission experiments show that concomitantly with the structural phasetransition, a metal-insulator phase transition takes place. In agreement withtheoretical predictions, the (root-3xroot-3)R30 ground state is interpreted asthe experimental realization of a Mott insulator for a narrow half-filled bandin a two-dimensional triangular lattice.Comment: 4 pages, 4 figure

physical review letters

Observation of a Mott Insulating Ground State for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Sn</mml:mi><mml:mo>/</mml:mo><mml:mi>Ge</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>111</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>at Low Temperature

Observation of a Mott Insulating Ground State forSn/Ge(111)at Low Temperature