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We propose and investigate the properties of a digital ferromagneticheterostructure (DFH) consisting of a $\delta$-doped layer of Mn in Si, using\textit{ab initio} electronic-structure methods. We find that (i) ferromagneticorder of the Mn layer is energetically favorable relative to antiferromagnetic,and (ii) the heterostructure is a two-dimensional half metallic system. Themetallic behavior is contributed by three majority-spin bands originating fromhybridized Mn-$d$ and nearest-neighbor Si-$p$ states, and the correspondingcarriers are responsible for the ferromagnetic order in the Mn layer. Theminority-spin channel has a calculated semiconducting gap of 0.25 eV. Analysisof the total and partial densities of states, band structure, Fermi surfacesand associated charge density reveals the marked two-dimensional nature of thehalf metallicity. The band lineup is found to be favorable for retaining thehalf metal character to near the Curie temperature ($T_{C}$). Being Si basedand possibly having a high $T_{C}$ as suggested by an experiment on dilutelydoped Mn in Si, the heterostructure may be of special interest for integrationinto mature Si technologies for spintronic applications.Comment: 4 pages, 4 figures, Revised version, to appear in Phys. Rev. Let

physical review letters

Half-Metallic Digital Ferromagnetic Heterostructure Composed of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>-Doped Layer of Mn in Si

Half-Metallic Digital Ferromagnetic Heterostructure Composed of aδ-Doped Layer of Mn in Si