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We show that the electron and hole Lande g factors in self-assembled III-Vquantum dots have a rich structure intermediate between that expected forparamagnetic atomic impurities and for bulk semiconductors. Strain, dotgeometry, and confinement energy significantly modify the effective g factorsof the semiconductor material from which the dot and barrier are constructed,yet these effects are insufficient to explain our results. We find that thequantization of the quantum dot electronic states further quenches the orbitalangular momentum of the dot states, pushing the electron g factor towards 2,even when all the semiconductor constituents of the dot have negative gfactors. This leads to trends in the dot's electron g factors that are theopposite of those expected from the effective g factors of the dot and barriermaterial. Both electron and hole g factors are strongly dependent on themagnetic field orientation; hole g factors for InAs/GaAs quatum dots have largepositive values along the growth direction and small negative values in-plane.The approximate shape of a quantum dot can be determined from measurements ofthis g factor asymmetry.

physical review letters

Landé<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>g</mml:mi></mml:math>Factors and Orbital Momentum Quenching in Semiconductor Quantum Dots

LandégFactors and Orbital Momentum Quenching in Semiconductor Quantum Dots