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In a recent Letter, Murzin et. al. [Phys. Rev. Lett., vol. 92, 016802 (2004)]investigated "instanton effects" in the magneto resistance data taken fromsamples with heavily Si-doped GaAs layers at low temperatures. This topologicalissue originally arose in the development of a microscopic theory of quantumHall effect some 20 years ago. The investigations by Murzin et. al., however,do not convey the correct ideas on scaling that have emerged over the years inthe general theory of quantum transport.Comment: comment on Phys. Rev. Lett., vol. 92, 016802 (2004

Comment on “Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers”