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In high-purity n-type GaAs under strong magnetic field, we are able toisolate a lambda system composed of two Zeeman states of neutral-donor boundelectrons and the lowest Zeeman state of bound excitons. When the two-photondetuning of this system is zero, we observe a pronounced dip in theexcited-state photoluminescence indicating the creation of the coherentpopulation-trapped state. Our data are consistent with a steady-statethree-level density-matrix model. The observation of coherent populationtrapping in GaAs indicates that this and similar semiconductor systems could beused for various EIT-type experiments.Comment: 5 pages, 4 figures replaced 6/25/2007 with PRL versio

physical review letters

Coherent Population Trapping of Electron Spins in a High-Purity<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs Semiconductor

Coherent Population Trapping of Electron Spins in a High-Purityn-Type GaAs Semiconductor