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We demonstrate that flow of longitudinal unpolarized current through aballistic two-dimensional electron gas with Rashba spin-orbit coupling willinduce nonequilibrium spin accumulation which has opposite sign for the twolateral edges and it is, therefore, the principal observable signature of thespin Hall effect in two-probe semiconductor nanostructures. The magnitude ofits out-of-plane component is gradually diminished by static disorder, while itcan be enhanced by an in-plane transverse magnetic field. Moreover, ourprediction of the longitudinal component of the spin Hall accumulation, whichis insensitive to the reversal of the bias voltage, offers a smoking gun todifferentiate experimentally between the extrinsic, intrinsic, and mesoscopicspin Hall mechanisms.Comment: 5 pages, 3 color EPS figures; published versio

Nonequilibrium Spin Hall Accumulation in Ballistic Semiconductor Nanostructures