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From the solution of a two-band model, we predict that the thermal andelectrical transport across the junction of a semimetal and an excitonicinsulator will exhibit high resistance behavior and low entropy production atlow temperatures, distinct from a junction of a semimetal and a normalsemiconductor. This phenomenon, ascribed to the dissipationless exciton flowwhich dominates over the charge transport, is based on the much longer lengthscale of the change of the effective interface potential for electronscattering due to the coherence of the condensate than in the normal state.Comment: RevTeX 4.0, 13 pages, 5 b/w figures, 1 colour figure, 1 table.  Version modified with respect to the original, which will appear in Physical  Review Letters. This version includes the supplementary (EPAPS) material as  an Appendix, and it is slightly longer than the accepted version (more text  and references

Coherent Transport in a Homojunction between an Excitonic Insulator and Semimetal