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By carefully analyzing the low temperature density dependence of 2Dconductivity in undoped high mobility n-GaAs heterostructures, we conclude thatthe 2D metal-insulator transition in this system is a density inhomogeneitydriven percolation transition due to the breakdown of screening in the randomcharged impurity disorder background. In particular, our measured conductivityexponent of $\sim 1.4$ approaches the 2D percolation exponent value of 4/3 atlow temperatures and our experimental data are inconsistent with there being azero-temperature quantum critical point in our system.Comment: 5 pages, 3 figure

Two-Dimensional Metal-Insulator Transition as a Percolation Transition in a High-Mobility Electron System