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Recent experiments on the silicon terminated $3\times 2$ SiC(100) surfaceindicated an unexpected metallic character upon hydrogen adsorption. Thiseffect was attributed to the bonding of hydrogen to a row of Si atoms and tothe stabilization of a neighboring dangling bond row. Here, on the basis ofDensity-Functional calculations, we show that multiple-layer adsorption of H atthe reconstructed surface is compatible with a different geometry: besidessaturating the topmost Si dangling bonds, H atoms are adsorbed at ratherunusual sites, \textit{i.e.} stable bridge positions above third-layer Sidimers. The results thus suggest an alternative interpretation for theelectronic structure of the metallic surfaceComment: 10 pages, 3 figures. Higher resolution figures may be obtained from  the authors (rosa@unimore.it). Submitted to Physical Review Letters in  September 2004, resubmitted after revision in February 200

physical review letters

Hydrogen-Induced Surface Metallization of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>SiC</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>100</mml:mn><mml:mo stretchy="false">)</mml:mo><mml:mtext mathvariant="normal">−</mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:mn>3</mml:mn><mml:mo>×</mml:mo><mml:mn>2</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>Revisited by Density Functional…

Hydrogen-Induced Surface Metallization ofβ−SiC(100)−(3×2)Revisited by Density Functional…