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We report scanning tunneling microscopy observations of Ge deposited on theSi(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstratethat Ge atoms replace so-called Si adatoms. Initially, the replacements arerandom, but distinct patterns emerge and evolve with increasing coverage, tillsmall islands begin to form. Corner adatom sites in the faulted half unit cellsare preferred. First-principles density functional calculations find thatadatom substitution competes energetically with a high-coordination bridgesite, but atoms occupying the latter sites are highly mobile. Thus, theobserved structures are indeed more thermodynamically stable.Comment: RevTex4, 4 pages, 4 figures, Fig. 2 of high quality available upon  request, to appear in Phys. Rev. Let

physical review letters

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="bold">Si</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>111</mml:mn><mml:mo stretchy="false">)</mml:mo><mml:mtext mathvariant="normal">−</mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>

Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed onSi(111)−(7×7)