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Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry.The electric field due to the gate produces a large ambipolar decrease inresistance at low temperatures. This is attributed to the development of apseudogap in the density of states and the couple of localized charge tostrain. The gate effect and mangetoresistance are interpreted in a consistentframework. The implications for the low temperature behavior of a manganitefilm in the two dimensional limit are discussed.Comment: 4 pages, 3 figure

physical review letters

Ambipolar Gate Effect and Low Temperature Magnetoresistance of Ultrathin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi mathvariant="normal">L</mml:mi><mml:mi mathvariant="normal">a</mml:mi></mml:mrow><mml:mn>0.8</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi><mml:mi mathvariant="normal">a</mml:mi></mml:mrow><mml:mn>0.2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">M</mml:mi><mml:mi …

Ambipolar Gate Effect and Low Temperature Magnetoresistance of UltrathinLa0.8Ca0.2M