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Using atomistic pseudopotential and configuration-interaction many-bodycalculations, we predict a metal-nonmetal transition and an excitonic groundstate in the InAs/InSb quantum dot (QD) system. For large dots, the conductionband minimum of the InAs dot lies below the valence band maximum of the InSbmatrix. Due to quantum confinement, at a critical size calculated here forvarious shapes, the single-particle gap $E_g$ becomes very small. Strongelectron-hole correlation effects are induced by the spatial proximity of theelectron and hole wavefunctions, and by the lack of strong (exciton unbinding)screening, afforded by the existence of fully discrete 0D confined energylevels. These correlation effects overcome $E_g$, leading to the formation of abi-excitonic ground state (two electrons in InAs and two holes in InSb) beingenergetically more favorable (by $\sim$ 15 meV) than the state withoutexcitons. We discuss the excitonic phase transition on QD arrays in the low dotdensity limit

physical review letters

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Prediction of an Excitonic Ground State inInAs/InSbQuantum Dots