English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

New mechanism of magnetoresistance, based on tunneling-emission of spinpolarized electrons from ferromagnets (FM) into semiconductors (S) andprecession of electron spin in the semiconductor layer under external magneticfield, is described. The FM-S-FM structure is considered, which includes verythin heavily doped (delta-doped) layers at FM-S interfaces. At certainparameters the structure is highly sensitive at room-temperature to variationsof the field with frequencies up to 100 GHz. The current oscillates with thefield, and its relative amplitude is determined only by the spin polarizationsof FM-S junctions at relatively large bias voltage.Comment: 5 pages, 2 figures, (v2) new plot with a dependence of current J on  magnetic field H added in Fig.2 (top panel), minor amendments in the text;  (v3) minor typos corrected. To appear in Phys. Rev. Letter

High-Frequency Spin-Valve Effect in a Ferromagnet-Semiconductor-Ferromagnet Structure Based on Precession of the Injected Spins