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We present a combined theoretical and experimental study of the ferromagneticsemiconductor (Ga,Mn)As which explains the remarkably large changes observed onlow temperature annealing. Careful control of the annealing conditions allowsus to obtain samples with ferromagnetic transition temperatures up to 159 K. Abinitio calculations, and resistivity measurements during annealing, show thatthe observed changes are due to out-diffusion of Mn interstitials towards thesurface, governed by an energy barrier of about 0.7-0.8 eV. The Mn interstitialis a double donor resulting in compensation of charge carriers and suppressionof ferromagnetism. Electric fields induced by high concentrations ofsubstitutional Mn acceptors have a significant effect on the diffusion.Comment: 5 pages, 4 figures, submitted to Physical Review Letter

physical review letters

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Mn Interstitial Diffusion in(Ga,Mn)As