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We report investigations of conductance fluctuations (noise) in doped siliconat low temperatures (T$<20$K) as it is tuned through the metal-insulatortransition (MIT). The scaled magnitude of noise, $\gamma_H$, increases withdecrease in T following an approximate power law $\gamma_H \sim T^{-\beta}$. Atlow T, $\gamma_H$ diverges as $n/n_c$ crosses 1 from the metallic side. We findthat the distribution function and second spectrum of the fluctuations showstrong non-gaussian behavior below 20K as $n/n_c$ decreases through 1. Inparticular, the observed distribution function which is gaussian for $n/n_c >>1$, develops a log-normal tail as the transition is approached from themetallic side and eventually it dominates in the critical region.Comment: 9 pages, 5 figure

Observation of Non-Gaussian Conductance Fluctuations at Low Temperatures in Si:P(B) at the Metal-Insulator Transition