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We demonstrate the controlled incorporation of P dopant atoms in Si (001)presenting a new path toward the creation of atomic-scale electronic devices.We present a detailed study of the interaction of PH3 with Si (001) and showthat it is possible to thermally incorporate P atoms into Si (001) below the Hdesorption temperature. Control over the precise spatial location at which Patoms are incorporated was achieved using STM H-lithography. We demonstrate thepositioning of single P atoms in Si with ~ 1 nm accuracy and the creation ofnanometer wide lines of incorporated P atoms.Comment: 5 pages, 4 figure

Atomically Precise Placement of Single Dopants in Si