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Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum wellheterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields.The measurement is sensitive only to the component of the spin that precessesabout the internal magnetic field in the semiconductor. This field is muchlarger than the applied field and depends strongly on the injection currentdensity. Details of the observed hysteresis in the spin injection signal arereproduced in a model that incorporates the magnetocrystalline anisotropy ofthe epitaxial Fe film, spin relaxation in the semiconductor, and the dynamicalpolarization of nuclei by the injected spins.Comment: 5 pages, 3 figure

Dynamic Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures