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High-resolution angle-resolved photoemission (ARPES) data show that ametal-insulator Mott transition occurs at the surface of the quasi-twodimensional compound TaSe$_2$. The transition is driven by the narrowing of theTa $5d$ band induced by a temperature-dependent modulation of the atomicpositions. A dynamical mean-field theory calculation of the spectral functionof the half-filled Hubbard model captures the main qualitative feature of thedata, namely the rapid transfer of spectral weight from the observedquasiparticle peak at the Fermi surface to the Hubbard bands, as thecorrelation gap opens up.Comment: 4 pages, 4 figures; one modified figure, added referenc

physical review letters

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Spectroscopic Signatures of a Bandwidth-Controlled Mott Transition at the Surface of1T−TaSe2