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We investigate electronic transport properties of the squashed armchaircarbon nanotubes, using tight-binding molecular dynamics and Green's functionmethod. We demonstrate a metal-to-semiconductor transistion while squashing thenanotubes and a general mechanism for such transistion. It is the distinctionof the two sublattices in the nanotube that opens an energy gap near the Fermienergy. We show that the transition has to be achieved by a combined effect ofbreaking of mirror symmetry and bond formation between the flattened faces inthe squashed nanotubes.Comment: 4 papges, 4 figures, to appear in Phys. Rev. Let

Metal-to-Semiconductor Transition in Squashed Armchair Carbon Nanotubes