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In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and theeffective mass have been studied by Pudalov et al. in a dilute 2D electronsystem in silicon. The authors contrast their data with the data obtained byour group (Shashkin et al., PRL 87, 086801 (2001)) and claim that the spinsusceptibility "increases gradually with decreasing density", which "does notsupport the occurrence of spontaneous spin polarization and divergence ofgm..." The purpose of this Comment is to show that all available experimentaldata, including those of Pudalov et al., are consistent with each other and arein favor of a spontaneous spin polarization and divergence of gm at a finiteelectron density in this 2D system.Comment: as publishe

Comment on “Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers”