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We report the first experimental demonstration that interface microstructurelimits diffusive electrical spin injection efficiency across heteroepitaxialinterfaces. A theoretical treatment shows that the suppression of spininjection due to interface defects follows directly from the contribution ofthe defect potential to the spin-orbit interaction, resulting in enhancedspin-flip scattering. An inverse correlation between spin-polarized electroninjection efficiency and interface defect density is demonstrated forZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%.Comment: 13 pages, 5 figures; submitted to PR

physical review letters

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Reduction of Spin Injection Efficiency by Interface Defect Spin Scattering inZnMnSe/Al