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Ion implantation of Mn ions into hole-doped GaP has been used to induceferromagnetic behavior above room temperature for optimized Mn concentrationsnear 3 at.%. The magnetism is suppressed when the Mn dose is increased ordecreased away from the 3 at.% value, or when n-type GaP substrates are used.At low temperatures the saturated moment is on the order of one Bohr magneton,and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of themagnetization provides an estimate Tc = 385K of the Curie temperature thatexceeds the experimental value, Tc = 270K. The presence of ferromagneticclusters and hysteresis to temperatures of at least 330K is attributed todisorder and proximity to a metal-insulating transition.Comment: 4 pages, 4 figures (RevTex4

Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C