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Ferroelectric switching and nanoscale domain dynamics were investigated usingatomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films.Measurements of domain size versus writing time reveal a two-step domain growthmechanism, in which initial nucleation is followed by radial domain wall motionperpendicular to the polarization direction. The electric field dependence ofthe domain wall velocity demonstrates that domain wall motion in ferroelectricthin films is a creep process, with the critical exponent mu close to 1. Thedimensionality of the films suggests that disorder is at the origin of theobserved creep behavior.Comment: 5 pages, 4 figure

physical review letters

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Domain Wall Creep in Epitaxial FerroelectricPb(Zr0.2Ti