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On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAsheterostructure we study the interaction correction to the Drude conductivityin the ballistic regime, $k_BT\tau /\hbar $ $>1$. It is shown that the'metallic' behaviour of the resistivity ($d\rho /dT>0$) of the low-density 2DHGis caused by hole-hole interaction effect in this regime. We find that thetemperature dependence of the conductivity and the parallel-fieldmagnetoresistance are in agreement with this description, and determine theFermi-liquid interaction constant $F_0^\sigma $ which controls the sign of$d\rho /dT$.Comment: 4 pages, 4 figure

Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime