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We have studied the magnetotransport properties of a high mobilitytwo-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) withdensities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of thezero-field 'metal-insulator transition' (MIT). In a parallel field well aboveB_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivityg(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments areconsistent with the coexistence of two phases in our system: a metallic phaseand a weakly insulating Fermi liquid phase having a percolation threshold closeto B_c

Weak-Localization-Like Temperature-Dependent Conductivity of a Dilute Two-Dimensional Hole Gas in a Parallel Magnetic Field