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In recent years systematic experimental studies of the temperature dependenceof the resistivity in a variety of dilute, ultra clean two dimensionalelectron/hole systems have revived the fundamental question of localization or,alternatively, the existence of a metal-insulator transition in the presence ofstrong electron-electron interactions in two dimensions. We argue that underthe extreme conditions of ultra clean systems not only is the electron-electroninteraction very strong but the role of other system specific properties arealso enhanced. In particular, we emphasize the role of valleys in determiningthe transport properties of the dilute electron gas in silicon inversion layers(Si-MOSFETs). It is shown that for a high quality sample the temperaturebehavior of the resistivity in the region close to the critical region of themetal-insulator transition is well described by a renormalization groupanalysis of the interplay of interaction and disorder if the electron band isassumed to have two distinct valleys. The decrease in the resistivity up tofive times has been captured in the correct temperature interval by thisanalysis, without involving any adjustable parameters. The considerablevariance in the data obtained from different Si-MOSFET samples is attributed tothe sample dependent scattering rate across the two valleys, presenting therebywith a possible explanation for the absence of universal behavior in Si-MOSFETsamples of different quality

Dilute Electron Gas near the Metal-Insulator Transition: Role of Valleys in Silicon Inversion Layers