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The temperature and density dependence of the phase coherence time$\tau_\phi$ in high-mobility silicon inversion layers was determined from themagnetoresistivity due to weak localization. The upper temperature limit forsingle-electron quantum interference effects was delineated by comparing$\tau_\phi$ with the momentum relaxation time $\tau$. A comparison between thedensity dependence of the borders for quantum interference effects and thestrong resistivity drop reveals that theses effects are not related to eachother. As the strong resistivity drop occurs in the Drude regime, the apparentmetallic behavior can not be caused by quantum coherent effects.Comment: 4 pages, 3 figs, LaTeX; new title, stronger conclusion

Exclusion of Quantum Coherence as the Origin of the 2D Metallic State in High-Mobility Silicon Inversion Layers