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Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H&gt;H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H&lt;H(sat), the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states. This unusual behavior may reflect the importance of many-body interactions.

Small-Angle Shubnikov–de Haas Measurements in a 2D Electron System: The Effect of a Strong In-Plane Magnetic Field