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In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. ( L/L(straight phi) approximately 10(3), where L(straight phi) is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L(3)(straight phi) were found to be saturated at &lt;(deltaG(straight phi))(2)&gt; approximately (e(2)/h)(2). An accurate knowledge of the level of disorder enables us to calculate the change in conductance deltaG1 due to movement of a single scatterer as &lt;(deltaG1)(2)&gt; approximately (e(2)/h)(2), which is approximately 2 orders of magnitude higher than its theoretically expected value in 3D systems.

Universal Conductance Fluctuations in Three Dimensional Metallic Single Crystals of Si