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We calculate the average number of electrons on a metallicsingle-electron-box as a function of the gate voltage for arbitrary values ofthe tunneling conductance. In the vicinity of the plateaus the problem isequivalent to calculating the helicity modulus of a classical inverse squareXY-model in one dimension. By a combination of perturbation theory, a two-looprenormalization group calculation and a Monte-Carlo simulation in theintermediate regime we provide a complete description of the smearing of theCoulomb staircase at zero temperature with increasing conductance.Comment: 4 pages revtex, 1 eps figur

Single-Electron Box and the Helicity Modulus of an Inverse SquareXYModel