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A Si substrate is bombarded by 3-keV Ar/sup +/ ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles.

physical review letters

Anomalous Time-of-Flight Distributions Observed for Argon Implanted in Silicon and Resputtered by<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Ar</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>-Ion Bombardment

Anomalous Time-of-Flight Distributions Observed for Argon Implanted in Silicon and Resputtered byAr+-Ion Bombardment