English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We present a consistent first-principles methodology to study both direct andphonon-assisted Auger-Meitner recombination (AMR) in indirect-gapsemiconductors that we apply to investigate the microscopic origin of AMRprocesses in silicon. Our results are in excellent agreement with experimentalmeasurements and show that phonon-assisted contributions dominate therecombination rate in both n-type and p-type silicon, demonstrating thecritical role of phonons in enabling AMR. We also decompose the overall ratesinto contributions from specific phonons and electronic valleys to furtherelucidate the microscopic origins of AMR. Our results highlight potentialpathways to modify the AMR rate in silicon via strain engineering.

Phonon-assisted Auger-Meitner Recombination in Silicon from First Principles