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Feshbach resonances are an invaluable tool in atomic physics, enablingprecise control of interactions and the preparation of complex quantum phasesof matter. Here, we theoretically analyze a solid-state analogue of a Feshbachresonance in two dimensional semiconductor heterostructures. In the presence ofinter-layer electron tunneling, the scattering of excitons and electronsoccupying different layers can be resonantly enhanced by tuning an appliedelectric field. The emergence of an inter-layer Feshbach molecule modifies theoptical excitation spectrum, and can be understood in terms of Fermi polaronformation. We discuss potential implications for the realization of correlatedBose-Fermi mixtures in bilayer semiconductors.

Tunable Feshbach resonances and their spectral signatures in bilayer semiconductors