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Electrical manipulation of spin textures inside antiferromagnets represents anew opportunity for developing spintronics with superior speed and high devicedensity. Injecting spin currents into antiferromagnets and realizing efficientspin-orbit-torque-induced switching is however still challenging due to thecomplicated interactions from different sublattices. Meanwhile, because of thediminishing magnetic susceptibility, the nature and the magnitude ofcurrent-induced magnetic dynamics remain poorly characterized inantiferromagnets, whereas spurious effects further complicate experimentalinterpretations. In this work, by growing a thin film antiferromagneticinsulator, {\alpha}-Fe2O3, along its non-basal plane orientation, we realize aconfiguration where an injected spin current can robustly rotate the N\'eelvector within the tilted easy plane, with an efficiency comparable to that ofclassical ferromagnets. The spin-orbit torque effect stands out among othercompeting mechanisms and leads to clear switching dynamics. Thanks to this newmechanism, in contrast to the usually employed orthogonal switching geometry,we achieve bipolar antiferromagnetic switching by applying positive andnegative currents along the same channel, a geometry that is more practical fordevice applications. By enabling efficient spin-orbit torque control on theantiferromagnetic ordering, the tilted easy plane geometry introduces a newplatform for quantitatively understanding switching and oscillation dynamics inantiferromagnets.

Efficient Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane