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The plateau-to-plateau transition in quantum Hall effect under high magneticfields is a celebrated quantum phase transition between two topological statesthrough either sweeping the magnetic field or tuning the carrier density. Therecent realization of the quantum anomalous Hall (QAH) insulators with tunableChern numbers introduces the channel degree of freedom to the dissipation-freechiral edge transport and makes the study of the quantum phase transitionbetween two topological states under zero magnetic field possible. Here, wesynthesized the magnetic topological insulator (TI)/TI penta-layerheterostructures with different Cr doping concentrations in the middle magneticTI layers using molecular beam epitaxy (MBE). By performing transportmeasurements, we found a zero magnetic field quantum phase transition betweenthe C = 1 and C = 2 QAH states. In tuning the transition, the Hall resistancemonotonically decreases from h/e2 to h/2e2, concurrently, the longitudinalresistance exhibits a maximum at the critical point. Our results show that theratio between the Hall resistance and the longitudinal resistance is greaterthan 1 at the critical point, which indicates that the original chiral edgechannel from the C = 1 QAH state coexists with the dissipative bulk conductionchannels. Subsequently, these bulk conduction channels appear to self-organizeand form the second chiral edge channel in completing the plateau phasetransition. Our study will motivate further investigations of this novel Chernnumber change-induced quantum phase transition and advance the development ofthe QAH chiral edge current-based electronic and spintronic devices.

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators