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We determine the energy splitting of the conduction-band valleys intwo-dimensional (2D) electrons confined in silicon metal oxide semiconductor(Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advancedsemiconductor manufacturing on 300 mm Si wafers and support a 2D electron gasof high quality with a maximum mobility of 17.6$\times$10$^3$cm$^2$/Vs andminimum percolation density of 3.45$\times$10$^{10}$cm$^{-2}$. Because of thelow disorder, we observe beatings in the Shubnikov-de Haas oscillations thatarise from the energy-split two low-lying conduction band valleys. From theanalysis of the oscillations beating patterns up to T = 1.7 K, we estimate amaximum valley splitting of 8.2 meV at a density of6.8$\times$10$^{12}$cm$^{-2}$. Furthermore, the valley splitting increases withdensity at a rate consistent with theoretical predictions for a near-idealsemiconductor/oxide interface.

Valley splitting in silicon from the interference pattern of quantum oscillations