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The energies of valley-orbit states in silicon quantum dots are determined byan as yet poorly understood interplay between interface roughness, orbitalconfinement, and electron interactions. Here, we report measurements of one-and two-electron valley-orbit state energies as the dot potential is modifiedby changing gate voltages, and we calculate these same energies using fullconfiguration interaction calculations. The results enable an understanding ofthe interplay between the physical contributions and enable a new probe of thequantum well interface.

How valley-orbit states in silicon quantum dots probe quantum well interfaces