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Here we use low-temperature scanning tunneling microscopy and spectroscopy toreveal the roles of the narrow electronic band in two 1$T$-TaS$_2$ relatedmaterials (bulk 1$T$-TaS$_2$ and 4$H_{\rm b}$-TaS$_2$). 4$H_{\rm b}$-TaS$_2$ isa superconducting compound with alternating 1$T$-TaS$_2$ and 1$H$-TaS$_2$layers, where the 1$H$-TaS$_2$ layer has weak charge density wave (CDW) patternand reduces the CDW coupling between the adjacent 1$T$-TaS$_2$ layers. In the1$T$-TaS$_2$ layer of 4$H_{\rm b}$-TaS$_2$, we observe a narrow electronic bandlocated near Fermi level, and its spatial distribution is consistent with thetight-binding calculations for two-dimensional 1$T$-TaS$_2$ layers. The weakelectronic hybridization between the 1$T$-TaS$_2$ and 1$H$-TaS$_2$ layers in4$H_{\rm b}$-TaS$_2$ shifts the narrow electronic band to be slightly above theFermi level, which suppresses the electronic correlation induced bandsplitting. In contrast, in bulk 1$T$-TaS$_2$, there is an interlayer CDWcoupling induced insulating gap. In comparison with the spatial distributionsof the electronic states in bulk 1$T$-TaS$_2$ and 4$H_{\rm b}$-TaS$_2$, theinsulating gap in bulk 1$T$-TaS$_2$ results from the formation of a bondingband and an antibonding band due to the overlap of the narrow electronic bandsin the dimerized 1$T$-TaS$_2$ layers.

Roles of the Narrow Electronic Band near the Fermi Level in 1$T$-TaS$_2$-Related Layered Materials