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Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gapat the charge neutrality point (CNP). This gap has previously been extensivelystudied by electrical transport through thermal activation measurements. Here,we report the determination of the gap size at the CNP of graphene/hBNsuperlattice through photocurrent spectroscopy study. We demonstrate twodistinct measurement approaches to extract the gap size. A maximum of ~ 14 meVgap is observed for devices with a twist angle of less than 1 degree. Thisvalue is significantly smaller than that obtained from thermal activationmeasurements, yet larger than the theoretically predicted single-particle gap.Our results suggest that lattice relaxation and moderate electron-electroninteraction effects may enhance the CNP gap in hBN/graphene superlattice.

Accurate Measurement of the Gap of Graphene/hBN Moir\'e Superlattice through Photocurrent Spectroscopy