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We report the discovery of electric-field-induced transition from atopologically trivial to a topologically nontrivial band structure in anatomically sharp heterostructure of bilayer graphene (BLG) and single-layerWSe2 per the theoretical predictions of Gmitra and Fabian [Phys. Rev. Lett.119, 146401 (2017)]. Through detailed studies of the quantum correction to theconductance in the BLG, we establish that the band-structure evolution arisesfrom an interplay between proximity-induced strong spin-orbit interaction (SOI)and the layer polarizability in BLG. The low-energy carriers in the BLGexperience an effective valley Zeeman SOI that is completely gate tunable tothe extent that it can be switched on or off by applying a transversedisplacement field or can be controllably transferred between the valence andthe conduction band. We demonstrate that this results in the evolution fromweak localization to weak antilocalization at a constant electronic density asthe net displacement field is tuned from a positive to a negative value with aconcomitant SOI-induced splitting of the low-energy bands of the BLG near the K(K') valley, which is a unique signature of the theoretically predictedspin-orbit valve effect. Our analysis shows that quantum correction to theDrude conductance in Dirac materials with strong induced SOI can only beexplained satisfactorily by a theory that accounts for the SOI-induced spinsplitting of the BLG low-energy bands. Our results demonstrate the potentialfor achieving highly tunable devices based on the valley Zeeman effect indual-gated two-dimensional materials.

Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect