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We analyze the quantum transport properties of MAPbI3 within a tight-bindingmodel. Charge carriers are strongly scattered by the Fr\"ohlich interactionwith longitudinal optical phonon modes. This limits their mobilities at roomtemperature to the order of 200 cm$^2$/Vs. In the presence of additionalextrinsic disorder the mobility decreases and a large fraction of theelectronic states at band edges can be localized. These states would beinsulating if the lattice were static, but their localization is broken by thedynamic disorder induced by the vibrations of the longitudinal optical modes.This process of electrons and holes diffusion, driven by the lattice dynamics,contributes to the unique electronic properties of this material.

physical review letters

Modelization of charge carriers mobilities in halide perovskites:  Fr\"ohlich scattering and quantum localization effects in a dynamic disorder  regime