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Microscopic corrugations are ubiquitous in graphene even when placed onatomically flat substrates. These result in random local strain fluctuationslimiting the carrier mobility of high quality hBN-supported graphene devices.We present transport measurements in hBN-encapsulated devices where such strainfluctuations can be in situ reduced by increasing the average uniaxial strain.When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancementof the carrier mobility by $\sim35\%$ is observed while the residual dopingreduces by $\sim39\%$. We demonstrate a strong correlation between the mobilityand the residual doping, from which we conclude that random local strainfluctuations are the dominant source of disorder limiting the mobility in thesedevices. Our findings are also supported by Raman spectroscopy measurements.

Mobility enhancement in graphene by in situ reduction of random strain fluctuations