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In Bernal stacked bilayer graphene interlayer coupling significantly affectsthe electronic bandstructure compared to monolayer graphene. Here we presentmagnetotransport experiments on high-quality $n$-doped bilayer MoS$_{2}$. Bymeasuring the evolution of the Landau levels as a function of electron densityand applied magnetic field we are able to investigate the occupation ofconduction band states, the interlayer coupling in pristine bilayer MoS$_{2}$,and how these effects are governed by electron-electron interactions. We findthat the two layers of the bilayer MoS$_{2}$ behave as two independentelectronic systems where a two-fold Landau level's degeneracy is observed foreach MoS$_{2}$ layer. At the onset of the population of the bottom MoS$_{2}$layer we observe a large negative compressibility caused by the exchangeinteraction. These observations, enabled by the high electronic quality of oursamples, demonstrate weak interlayer tunnel coupling but strong interlayerelectrostatic coupling in pristine bilayer MoS$_{2}$. The conclusions from theexperiments may be relevant also to other transition metal dichalcogenidematerials.

Absence of inter-layer tunnel coupling of $K$-valley electrons in bilayer MoS$_{2}$