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We report measurements of the diffusion rate of isolated ion-implanted$^{8}$Li$^{+}$ within $\sim$120 nm of the surface of oriented single-crystalrutile TiO$_2$ using a radiotracer technique. The $\alpha$-particles from the$^{8}$Li decay provide a sensitive monitor of the distance from the surface andhow the depth profile of $^{8}$Li evolves with time. The main findings are thatthe implanted Li$^{+}$ diffuses and traps at the (001) surface. TheT-dependence of the diffusivity is described by a bi-Arrhenius expression withactivation energies of 0.3341(21) eV above 200 K, whereas at lower temperaturesit has a much smaller barrier of 0.0313(15) eV. We consider possible originsfor the surface trapping, as well the nature of the low-T barrier.

Bi-Arrhenius diffusion and surface trapping of $^{8}$Li$^{+}$ in rutile TiO$_2$