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The Berry curvature dipole is a physical quantity that is expected to allowvarious quantum geometrical phenomena in a range of solid-state systems.Monolayer transition metal dichalcogenides provide an exceptional platform tomodulate and investigate the Berry curvature dipole through strain. Here wetheoretically demonstrate and experimentally verify for monolayer MoS$_\rm{2}$the generation of valley orbital magnetization as a response to an in-planeelectric field due to the Berry curvature dipole. The measured valley orbitalmagnetization shows excellent agreement with the calculated Berry curvaturedipole which can be controlled by the magnitude and direction of strain. Ourresults show that the Berry curvature dipole acts as an effective magneticfield in current-carrying systems, providing a novel route to generatemagnetization.

Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS$_2$