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A key feature of monolayer semiconductors, such as transition-metaldichalcogenides, is the poorly screened Coulomb potential, which leads to largeexciton binding energy (Eb) and strong renormalization of the quasiparticlebandgap (Eg) by carriers. The latter has been difficult to determine due tocancellation in changes of Eb and Eg, resulting in little change in opticaltransition energy at different carrier densities. Here we quantify bandgaprenormalization in macroscopic single crystal MoS2 monolayers on SiO2 usingtime and angle resolved photoemission spectroscopy (TR-ARPES). At excitationdensity above the Mott threshold, Eg decreases by as much as 360 meV. Wecompare the carrier density dependent Eg with previous theoretical calculationsand show the necessity of knowing both doping and excitation densities inquantifying the bandgap.

Direct Determination of Band Gap Renormalization in Photo-Excited Monolayer MoS2