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Crystals with symmetry-protected topological order, such as topologicalinsulators, promise coherent spin and charge transport phenomena even in thepresence of disorder at room temperature. Still, a major obstacle towards anapplication of topological surface states in integrated circuits is a clear,reliable, and straightforward read-out independent of a prevailing chargecarrier density in the bulk. Here, we demonstrate how to image and read-out thelocal conductance of helical surface modes in the prototypical topologicalinsulators Bi2Se3 and BiSbTe3. We apply the so-called Shockley-Ramo theorem todesign an optoelectronic probe circuit for the gapless surface states, andsurprisingly find a precise conductance quantization at 1e2/h. Theunprecedented response is a clear signature of local spin-polarized transport,and it can be switched on and off via an electrostatic field effect. Themacroscopic, global read-out scheme is based on the displacement currentresistivity, and it does not require coherent transport between electrodes.6 Itprovides a generalizable platform for studying further non-trivial gaplesssystems such as Weyl-semimetals and quantum spin-Hall insulators.

Switchable quantized conductance in topological insulators revealed by the Shockley-Ramo theorem